Comparison of 1.2 kV SiC Superjunction MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth

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  • Sometani Mitsuru
    Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST)
  • Oozono Kunihide
    Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST)
  • Ji Shiyang
    Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST)
  • Tawara Takeshi
    Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST)
  • Morimoto Tadao
    Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST)
  • Kato Tomohisa
    Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST)
  • Kojima Kazutoshi
    Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST)
  • Harada Shinsuke
    Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST)

Bibliographic Information

Other Title
  • マルチエピ法及びトレンチ埋め戻しエピ法で作製した1.2 kV耐圧SiC SJ-MOSFETの性能比較

Abstract

<p>We compared static and dynamic characteristics of a 1.2 kV-Class SJ-MOSFET fabricated by the multi-epitaxial growth (ME) method and the trench-filling epitaxial growth (TFE) method, which is expected to have a lower process cost. Comparably low specific on-resistance and switching losses were observed for the SJ-MOSFETs fabricated by both methods.</p>

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