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- Miyoshi Tomoyuki
- Research & Development Group, Hitachi, Ltd.
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- Suzuki Hiroshi
- Research & Development Group, Hitachi, Ltd.
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- Hirao Takashi
- Research & Development Group, Hitachi, Ltd.
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- Takada Yusuke
- Research & Development Group, Hitachi, Ltd.
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- Furukawa Tomoyasu
- Research & Development Group, Hitachi, Ltd.
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- Mori Mutsuhiro
- Railway Systems Business Unit, Hitachi, Ltd.
Bibliographic Information
- Other Title
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- 蓄積電荷を時空制御した高電導IGBT (TASC HiGT)
Abstract
<p>A concept on High-conductivity IGBT with Time And Space Control of stored carrier (TASC HiGT) for pursuit of low-loss is proposed. The function is divided into high-conductivity chip (Hc) and high-speed chip (Hs) controlled by Dual-gate so as to exhibit the optimum stored carrier density for conduction and switching operation. By obtaining controllability of the stored carrier density over the drift, a ‒47% trade-off improvement on 6.5 kV rated was demonstrated. The proposed concept can generate further ‒34% inverter loss effect keeping low-cost Si material merit.</p>
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 144 (3), 221-227, 2024-03-01
The Institute of Electrical Engineers of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390017843890901376
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- ISSN
- 13488155
- 03854221
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- Text Lang
- ja
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- Data Source
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- JaLC
- Crossref
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- Abstract License Flag
- Disallowed