ヒ素-アンチモン-モリブデン系三元錯体を用いる吸光光度法による半導体用二酸化ケイ素薄膜中のヒ素の定量

北爪 英一, 矢木 邦博

doi:10.2116/bunsekikagaku.30.9_608

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ひ素‐アンチモン‐モリブデン系三元錯体を用いる吸光光度法による半導体用二酸化けい素薄膜中のひ素の定量
Spectrophotometric determination of arsenic in semiconductor silicon dioxide film through formation of an arsenic-antimony-molybdenum ternary complex
ヒソアンチモンモリブデンケイサンゲンサクタイオモチイルキュウコウ

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Spectrophotometric determination of arsenic at the microgram level, based on formation of an arsenicantimony-molybdenum ternary complex was studied. It was found that an [H⁺]/[MoO₄^2-] ratio of 90±10 was optimal for stable complex formation in an (0.0010.003) M molybdate solution at the room temperature. The As(V) : Sb : Mo ratio in the complex was estimated through the continuous variations method, and elemental analysis, to be 1 : 2 : 8. The precision was 2.5 % at 2 μg of arsenic, and the lower limit of determination(Absorbance=0.01) was 0.2μg/5 ml. Phosphorus affected arsenic(V) determination even in low concentrations. However, arsenic(III) and germanium did not interfere with the determination until they existed in the same concentrations as arsenic(V), and silicon did not interfere with even in concentrations of a hundred times that of arsenic(V). This method was successfully applied to the determination of total arsenic at the microgram level in semiconductor silicon dioxide film.

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分析化学

分析化学 30 (9), 608-612, 1981

公益社団法人日本分析化学会

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