Determination of trace impurities in sintered silicon carbide and silicon nitride by the pressure acid decomposition/ICP-AES.

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  • 加圧酸分解／誘導結合プラズマ発光分析法による炭化ケイ素，窒化ケイ素焼結体中の不純物の定量
  • カアツ サン ブンカイ ユウドウ ケツゴウ プラズマ ハッコウ ブンセキホウ ニ

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Abstract

Several sample decomposition methods were examined to determine trace impurities in sintered silicon carbide and silicon nitride. The pulverized samples were severely contaminated. A lump (about 0.15 g) of sintered silicon carbide sample was decomposed with a mixture of 5 ml of sulfuric acid+2.5 ml of nitric acid+2.5 ml of hydrofluoric acid in a Teflon pressure vessel at 230°C. Similarly about 0.3 g of sintered silicon nitride sample was decomposed with a mixture of 6 ml of nitric acid+4 ml of hydrofluoric acid at 170°C. The proposed methods were applied to some commercial samples, and the impurities were determined by ICP-AES.

Journal

  • BUNSEKI KAGAKU

    BUNSEKI KAGAKU 41 (12), T151-T156, 1992

    The Japan Society for Analytical Chemistry

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