Separation of impurities in gallium arsenide.

  • TANAKA Tohru
    Material Evaluation Section, Engineering Department, NTT Electrical Communications Laboratories
  • KUROSAWA Satoru
    Material Evaluation Section, Engineering Department, NTT Electrical Communications Laboratories
  • HONMA Nakahachiro
    Material Evaluation Section, Engineering Department, NTT Electrical Communications Laboratories

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Other Title
  • ひ化ガリウム中の不純物の分離
  • ヒカ ガリウムチュウ ノ フジュンブツ ノ ブンリ
  • ヒ化ガリウム中の不純物の分離

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Description

A systematic separation procedure has been established for the determination of impurities in gallium arsenide using anion exchange and ether extraction. This was previously thought difficult in practical analyses since the impurity amounts were 106 times smaller than the amounts of the gallium and arsenic matrices. The separation of aluminium, boron, chromium and manganese from the matrices was achieved by using 6M hydrochloric acid in a 25-cm-length column, which also increased the arsenic elution delay from the elution of the above four elements. These impurities were recovered up to 100% and arsenic was quantitatively removed by collecting 02ml of eluted solution. It was demonstrated that chromium and manganese are separable even in nanogram amounts, equivalent to parts per million by weight (ppm wt) in gallium arsenide, whereas aluminium and boron have not yet been separated due to contamination. In the separation of selenium using a 50-cm-column, recovery was only 80% due to its disproportionation reaction. Copper and gallium, which can only be eluted with dilute hydrochloric acid, were easily separated from arsenic. In the presence of higher gallium concentrations ether extraction was necessary for the successful separation of copper and gallium from arsenic by anoin exchange. Four times extraction successfully led to a 94% copper recovery and almost perfect gallium removal. Having extremely strong adsorbability in the presence of chloride ions, zinc can be eluted quantitatively with 2M nitric acid. Matrix contamination in the zinc solution was found to be negligible by checking at the 10ppm wt level in gallium arsenide.

Journal

  • BUNSEKI KAGAKU

    BUNSEKI KAGAKU 35 (11), 935-940, 1986

    The Japan Society for Analytical Chemistry

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