Analytical Chemistry represented by "super" and "ultra". Determination of ultratrace phosphorus and titanium on silicon wafer surface by high resolution ICP-MS.

DOI NDL Digital Collections Web Site Web Site 3 Citations 12 References

Bibliographic Information

Other Title
  • 超のつく分析化学　　高分解能誘導結合プラズマ質量分析法によるシリコンウェハー上の超微量リン及びチタンの定量
  • 高分解能誘導結合プラズマ質量分析法によるシリコンウェハー上の超微量リン及びチタンの定量
  • コウ ブンカイノウ ユウドウ ケツゴウ プラズマ シツリョウ ブンセキホウ ニ ヨル シリコンウェハー ジョウ ノ チョウビリョウ リン オヨビ チタン ノ テイリョウ

Search this article

Description

The determination of trace amounts of P and Ti on a Si wafer by high resolution ICP-MS has been investigated. Si oxide film on the wafer was decomposed by the WSA method and metallic impurities were collected into a 0.1 ml solution. A sample solution was introduced by using optimized MCN. The spectrum interference for 31P and 48Ti caused by acids and the Si matrix was removed with a mass resolution of 5000. The recoveries of P and Ti were confirmed by recovery tests using a dip method or a micro-droplet method. A comparison of proposed method and TRXRF method showed a good agreement for Ti. The detection limits for P and Ti on an 8 inch Si wafer were 3E+08 atoms/cm2 and 6E+06 atoms/cm2, respectively, and were sufficient for the evaluating actual semiconductor device manufacturing.

Journal

  • BUNSEKI KAGAKU

    BUNSEKI KAGAKU 50 (6), 453-458, 2001

    The Japan Society for Analytical Chemistry

Citations (3)*help

See more

References(12)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top