Growth of ZnSe films on GaAs, quartz and glass substrates by an ion beam deposition technique.

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  • イオンビーム法によるＧａＡｓ，石英，ガラス基板上へのＺｎＳｅ薄膜の成長
  • イオン ビームホウ ニ ヨル GaAs,セキエイ,ガラス キバンジョウ エ ノ

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Description

Ga doped ZnSe films were prepared on fused quartz, 7059 glass and Cr doped (100) GaAs by means of an ion beam deposition technique. ZnSe films grown on fused quartz and 7059 glass were a polycrystal with a preferential <111> orientation. Single crystalline ZnSe grew epitaxially on (100) GaAs. The resistivities of the ZnSe films varied with the amount of Ga doped during the film growth. The ZnSe films grown on fused quartz and 7059 glass had the resistivities ranging between 2×106 and 2×1010 Ω ·cm. Also, the resistivities of the ZnSe films grown on (100) GaAs were 4×1022×105 Ω ·cm.

Journal

  • Shinku

    Shinku 28 (1), 19-29, 1985

    The Vacuum Society of Japan

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