High Efficiency a-SiC: H/a-Si: H Heterojunction Solar Cells

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  • TAWADA Yoshihisa
    Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
  • TSUGE Kazunori
    Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
  • KONDO Masataka
    Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
  • OKAMOTO Hiroaki
    Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
  • HAMAKAWA Yoshihiro
    Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

Bibliographic Information

Other Title
  • 高効率ａ‐ＳｉＣ：Ｈ／ａ‐Ｓｉ：Ｈヘテロ接合太陽電池
  • コウ コウリツ a SiC H a Si Hヘテロ セツゴウ タイヨウ デンチ

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Abstract

Properties and fabrication technical data on glow discharge produced hydrogenated amorphous silicon carbide have been described. A series of experimantal studies of the tffects of impurity doping on the amorphous silicon carbide has also been carried out. It has been shown from the experiment that a hydrogenated amorphous silicon carbide prepared by the plasma decomposition of [SiH4(i-x) +CH4(x)] gas mixture has a good valency electron controllability. Employing the property of the valency controlled a-SiC: H as a wide gap window junction, a-SiC: H/a-Si: H heterojunction solar cells have been fabricated. As a result, we have succeeded to break through an 8% efficiency barrier with this new material. A typical performance of a-SiC: H/a-Si: H heterojunction cell is Jsc of 15.21 mA/cm2, Voc of 0.88 volts, FF of 60.1% and η of 8.04%.

Journal

  • Shinku

    Shinku 25 (6), 448-456, 1982

    The Vacuum Society of Japan

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