Deposition of ZnO Thin Films on LiNbO3 Substrates Using Sputtering Technique.

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  • YAMAMOTO Hideki
    Department of Electronic Control Engineering, Yonago National College of Technology
  • SAIGA Noriaki
    Department of Electronic Control Engineering, Yonago National College of Technology
  • NISHIMORI Katsumi
    Department of Electrical and Electronic Engneering, Faculty of Engineering, Tottori University

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Other Title
  • ＬｉＮｂＯ３基板上へのＺｎＯスパッタ薄膜の形成
  • LiNbO3 キバン ジョウ エ ノ ZnO スパッタ ハクマク ノ ケイセイ

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Abstract

ZnO thin films were deposited on several LiNbO3 substrates with specified orientation by a rf-sputtering technique. The films were deposited on the substrates at room temperature or 573 K in various oxygen-argon atmospheres. From X-ray diffraction pattern, ZnO (002) reflection peak was measured for both of x and z cut LiNbO3 substrates. ZnO (002) peak intensity depended on gas flow rate of oxygen to argon and anneal temperature. When the film was deposited on z cut LiNbO3 substrate at 573 K in O2 (20%) + Ar (80%) gas and annealed at 773 K in air, the film showed the crystalline growth highly oriented at [002] direction.

Journal

  • Shinku

    Shinku 42 (3), 163-166, 1999

    The Vacuum Society of Japan

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