Electrical Characteristics of Au/n-Ge Schottky Barrier Diode Grown on Si Substrate.
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- YOSHIMOTO Tomomi
- Department of Electronic and Information Engineering, Hokkaido Tokai University
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- SAKAMOTO Kunihiro
- Electrotechnical Laboratory
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- IWATA Tatsuo
- Department of Electronic and Information Engineering, Hokkaido Tokai University
Bibliographic Information
- Other Title
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- Si基板上に製作したAu/n‐Geショットキー障壁ダイオードの電気的特性
- Si キバン ジョウ ニ セイサク シタ Au n Ge ショットキー ショウヘキ ダイオード ノ デンキテキ トクセイ
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Abstract
We have grown a Ge layer on Si (100) substrate and fabricated Au/n-Ge Schottky barrier diode. The Ge layer was grown by solid source molecular beam epitaxy (MBE). The growth procedure consisted of epitaxial growth of Ge layer using Sb as a surface-active-agent (surfactant) and high temperature (620°C) post growth annealing. The crystal structure was evaluated by reflection high-energy electron diffraction (RHEED) and the surface morphology was evaluated by atomic force microscopy (AFM). The RHEED pattern indicated the epitaxial growth of the Ge layer. Examination by AFM revealed some pits on the surface which were considered to be related to dislocation within the sample. The Sb surfactant worked as the donor in the epitaxial layer after the high temperature post growth annealing. The Sb concentration at the surface of the sample was 3 × 1017 cm-3. The fabricated device showed the diode characteristics. The leakage current under the reverse bias condition was high and the ideal factor was large. It would seem that the reasons for the high leakage current and the large ideal factor were related to the pits on the surface of the sample.
Journal
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- Shinku
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Shinku 43 (3), 277-279, 2000
The Vacuum Society of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679040424960
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- NII Article ID
- 10004561673
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- NII Book ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL BIB ID
- 5360981
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed