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- INOUE Narumi
- Department of Electronic Engineering, The National Defense Academy
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- TOYAMA Ichiro
- Department of Electrical Engineering, The National Defense Academy
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- KASHIWABARA Shigeru
- Department of Electrical Engineering, The National Defense Academy
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- TOSHIMA Shigetada
- Department of Electrical Engineering, The National Defense Academy
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- FUJIMOTO Ryozo
- Department of Electrical Engineering, The National Defense Academy
書誌事項
- タイトル別名
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- Deposition of BaTiO3 Thin Films by ArF
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抄録
BaTiO3 films have been deposited on a quartz substrate at various substrate temperatures by the ArF excimer laser ablation technique. Crystallization of the film deposited at substrate temperatures as low as 300°C was confirmed by X-ray diffraction analysis. The expansion velocities of the laser plume and the ablated species in the plume have also been investigated by time-resolved optical observation and spectroscopy.
収録刊行物
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- 真空
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真空 36 (4), 410-413, 1993
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282679041133312
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- NII論文ID
- 10007959900
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 3824345
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可