ＭＢＥによるＧａＡｓＰ混晶の成長

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書誌事項

タイトル別名
  • Crystal growth of GaAsP by molecular beam epitaxy.
  • MBE ニ ヨル GaAsP コンショウ ノ セイチョウ

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説明

The effects of As, P molecular source temperature and substrate temperature on the composition of grown GaAsP were studied. Atomic concentration of P in GaAsP is increased with the substrate temperature. The lattice constant of GaAsP layer is affected by the substrate. It is explained by the deformation of the epitaxial crystal lattice caused by the misfit between the grown layer and substrate.<BR>The growth of graded gap GaAsP with Be doping was studied. A cross-hatch pattern was observed on the surface of nondoped graded gap GaAsP layer.

収録刊行物

  • 真空

    真空 28 (2), 69-76, 1985

    一般社団法人 日本真空学会

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