Vacuum Electron Sources. Fabrication of Integrated Field Emitters.

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Other Title
  • 真空と電子源　　集積型電界放出電子源の製作
  • シュウセキガタ デンカイ ホウシュツ デンシゲン ノ セイサク

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Description

We have fabricated three types of silicon (Si) field emitters that consist of a Si conical tip and niobium gate electrodes, as follows. (1) An np-type emitter, in which an np junction is built by using ion implantation, exhibits photosensitive field emission. (2) A MOSFET-structured field emitter consists of an emitter tip and a built-in MOSFET. This device exhibits remarkable stability and controllability of emission current. (3) A double-gated field emitter has a vertical triode structure consisting of a conical Si tip and two gates surrounding the tip. The upper gate operates as a focusing lens to generate focused electron beams.

Journal

  • Shinku

    Shinku 41 (4), 434-439, 1998

    The Vacuum Society of Japan

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