Dependence of electron inelastic mean free paths on electron energy and materials at low energy region. I: Elements.

DOI Web Site 2 Citations
  • TANUMA Shigeo
    Central Research Laboaratories, Nippon Mining Co. Ltd.
  • POWELL C. J.
    National Institute of Standards and Technology, Gaithersburg
  • PENN D. R.
    National Institute of Standards and Technology, Gaithersburg

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Other Title
  • 低エネルギー領域における電子の非弾性平均自由行程のエネルギーと物質に対する依存性　Ｉ．　元素について
  • テイ エネルギー リョウイキ ニ オケル デンシ ノ ヒ ダンセイ ヘイキン
  • I : Elements
  • I.元素について

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Abstract

We have proposed a general formula of electron inelastic mean free path (IMFP) to describe the calculated IMFPs over the 50-2000 eV energy range based on the Inokuti's modified Bethe formula for the inelastic scattering cross sec-tion. The IMFPs for 50-2000 eV electrons in 27 elements were calculated using Penn's algorithm. The IMFP dependence on electron energy in the range 50-200 eV varies considerably from materal to material. These variations are associated with substantial differences in the electron energy-loss functions amongst the material. We also found that the modified Bethe formula by Inokuti could be fitted to the calculated IMFPs in the range 50-2000 eV within 3% relative error.

Journal

  • Shinku

    Shinku 33 (2), 58-62, 1990

    The Vacuum Society of Japan

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