書誌事項
- タイトル別名
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- Long Time Operation of Si:C Field Emitter Arrays in H2 Gas Atmosphere
- スイソ ガス ドウニュウカ ニ オケル Si C デンカイ ホウシュツ デンシゲン ノ ケイジ ヘンカ ノ ソクテイ
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We measured current variation of carbonoized silicon-field emitter arrays (Si:C-FEA) in hydrogen (H2) ambient to show durability against hydrogen exposure. We operated both silicon-field emitter arrays (Si-FEA) and Si:C-FEA in H2 atmosphere for 100 hours. Hydrogen gas is one of the major component of total residual pressure in ion implanter. As a result, the emission current from Si-FEA decreased from 20 μA to 8 μA. But the emission current from Si:C-FEA increased from 20 μA to 80 μA. It was shown that the durability of Si:C-FEA against H2 gas was better than that of Si-FEA.<br>
収録刊行物
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- 真空
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真空 50 (3), 178-180, 2007
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282679041801088
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- NII論文ID
- 10019928161
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 8786588
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可