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- KAWAKAMI Yoichi
- Department of Electrical Engineering, Kyoto University
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- Wu Yi-hong
- Department of Electrical Engineering, Kyoto University
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- MIYAZAKI Yasunori
- Department of Electrical Engineering, Kyoto University
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- TOYODA Takashi
- Department of Electrical Engineering, Kyoto University
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- FUJITA Shizuo
- Department of Electrical Engineering, Kyoto University
Bibliographic Information
- Other Title
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- ZnSeのMOMBEの成長におけるGaAs基板硫黄処理効果
- ZnSe ノ MOMBE ノ セイチョウ ニ オケル GaAs キバン イオウ
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Description
II-VI wide-gap semiconductors, such as ZnSe, CdS and ZnS are very promising materials for the potential application to optoelectronic devices which cover from blue to ultra violet spectral region. To this end, it is important to develop the fabrication technique. Although epilayers of good quality have been grown on GaAs substrates by molecular beam epitaxy (MBE), metalorganic molecular beam epitaxy (MOMBE) and organometallic vapour phase epitaxy (OMVPE), it is still difficult to obtain epilayers of device quality. Recently, we have found that the surface pretreatment technique plays an important role in fabricating high-quality epilayers through in-situ RHEED monitoring in the MOMBE system. In this paper, we report that layer-by-layer or two-dimensional growth of ZnSe is successfully achieved from an initial stage of growth, if the GaAs is pretreated by (NH4)2Sx, solution. Furthermore, we also report that not only the ZnSe/GaAs interface properties but also the optical qualities of ZnSe and ZnS epilayers are greatly improved by this pretreatment.
Journal
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- Shinku
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Shinku 33 (11), 861-866, 1990
The Vacuum Society of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679041992960
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- NII Article ID
- 130000862926
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- NII Book ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL BIB ID
- 3690988
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed