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- HOFMANN Siegfried
- Max-Planck-Institut für Metalforschung, Institut für Werkstoffwissenschaft, Seestr
書誌事項
- タイトル別名
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- Depth Profiling Fundamental Aspects and
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Depth profiling by sputteirng in combination with surface analysis has become a most effective way to determine the depth distribution of composition in thin films. The principles of the method and its fundamental capabilities and limitations are briefly discussed. Various phenomena, the most important of which are due to ion beam induced changes of surface roughness and composition, limit the experimentally achievable depth resolution. Recent progress in studying the influence of sample characteristics and experimental parameters like ion beam energy and incidence angle as well as sample rotation on depth resolution and its dependence on the sputtered depth serves as a guideline for optimized profiling conditions. With these, even for metallic samples and sputtered depths approaching micrometer dimension, a depth resolution of a few nanometers can be obtained. Knowledge of the depth resolution function allows deconvolution of a measured, normalized profile in order to obtain the true depth distribution of composition.
収録刊行物
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- 真空
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真空 33 (9), 721-732, 1990
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282679042039168
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- NII論文ID
- 130000862522
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 3688088
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可