書誌事項
- タイトル別名
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- Fabrication of Highly Oriented .BETA.-FeSi2 by Ion Beam Sputter Deposition.
- イオンビームスパッタリングホウ ニ ヨル コウハイコウ ベータ FeSi2 ノ サクセイ
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抄録
We have prepared the “environmentally friendly” semiconductor, β-FeSi2 thin films by ion beam sputter deposition method. The temperature of Si (100) substrate during the deposition and total amount of deposited Fe have been changed in order to find the optimum condition of the film formation. The crystallinity and surface morphology of the formed silicides were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. It is understood that the domain of the epitaxially grown β-FeSi2 increases with the substrate temperature up to 700°C at the fixed amount of deposited Fe (33 nm) by XRD spectra. On the other hand, α-FeSi2 is appeared and increased with the temperature above 700°C. Granulation of the surface is also observed by SEM images at this temperature region. At the fixed temperature condition (700°C), formation of α phase, which is obtained at the higher temperature compared with β phase, is observed for the fewer deposited samples. These results suggest the possibility of the epitaxially grown β-FeSi2 formation at the lower (<700°C) temperature region.
収録刊行物
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- 真空
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真空 45 (1), 26-31, 2002
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282679042146560
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- NII論文ID
- 10007762704
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
- http://id.crossref.org/issn/05598516
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- NDL書誌ID
- 6067639
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可