Nitridation Mechanisms on Si(100) through Strong N Condensation

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  • 窒素の強凝集によるＳｉ（１００）窒化膜形成機構
  • チッソ ノ キョウギョウシュウ ニ ヨル Si 100 チッカマク ケイセイ キコウ

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Abstract

  We studied N condensation behaviors in crystalline Si. N atoms introduced rapidly on Si(100) generate SiN agglomerated structures. We found that this agglomeration is induced by charge transfer between Si and N atoms, which is much stronger than those of silicon oxidation. N atoms introduced slowly on Si(100), however, stay at around the third layer from the topmost surface, leading likely to a stable Si-N network layer at around the same layer. This layer can be a seed layer for layer-by-layer Si3N4 growth on Si(100) along the vertical direction to the surface. Agglomeration and uniform growth of Si3N4 growth have been clearly observed by experimental techniques.<br>

Journal

  • Shinku

    Shinku 50 (11), 652-658, 2007

    The Vacuum Society of Japan

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