Diffusion of Impurities into Tin Oxide Films

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  • ATAKA Saburo
    Central Research Laboratory, Hitachi Ltd.
  • INAO Kiyohisa
    (株)日立製作所中央研究所 現在は(株)日立製作所茂原工場

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Other Title
  • ＳｎＯ?S２?T膜への不純物拡散
  • SnO2 マク エ ノ フジュンブツ カクサン

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Abstract

Thermal diffusion of impurities (P, Te, Se, Zn) into tin oxide films has been investigated in order to control their electrical properties. The diffusion of the impurities begins at temperatures as low as 300°C. The sheet resistance of the film diffused with phosphorus at 400°C markedly increases to the extent of more than 100 MΩ/square. In case of phosphorus, tellurium and selenium diffusion, the sheet resistances increase along with the diffusion temperatures. But the resistances of tellurium- and selenium-diffused films do not change so largely as that of phosphorus-diffused ones. On the contrary, the resistance of zinc-diffused film has a peak near the diffusion temperature of 300°C. Also the transmittance of the films after the diffusion of phosphorus, tellurium and selenium does not decrease largely expect for that of zinc. <BR>It is concluded that the resistance of tin oxide films can be controlled by thermal diffusion of impurities.

Journal

  • Shinku

    Shinku 22 (2), 42-48, 1979

    The Vacuum Society of Japan

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