書誌事項
- タイトル別名
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- Defects and Functions in Ferroelectric Memory Materials
- キョウ ユウデンタイ メモリー ザイリョウ ニ オケル コウシ ケッカン ト キノウ
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Ferroelectric memories have attracted much attention because of the invaluable advantage of nonvolatile and high-speed read-write functions. The current status of ferroelectric memory materials is briefly reviewed, and the effects of oxygen vacancies analyzed by first-principles band-structure calculations are described. We show that the defect engineering of cation vacancies as well as oxygen vacancies is effective in controlling the polarization properties of layered ferroelectrics.
収録刊行物
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- 日本結晶学会誌
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日本結晶学会誌 46 (1), 3-8, 2004
日本結晶学会
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詳細情報 詳細情報について
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- CRID
- 1390282679062780544
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- NII論文ID
- 10012663817
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- NII書誌ID
- AN00188364
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- ISSN
- 18845576
- 03694585
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- NDL書誌ID
- 6874371
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可