Ion-Channeling Analysis of Lattice Defects in Single Crystals

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  • イオン・チャネリングによる結晶内格子欠陥の解析
  • イオン チャネリング ニヨル ケッショウナイ コウシ ケッカン ノ カイセキ

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Channeling-effect measurements for structural analysis of lattice defects in single crystals are reviewed. Angle dependence of the yields of close collisions such as Rutherford backscattering, X-ray emission and nuclear reaction is shown to be powerful to determine the lattice site of impurity atoms and self-interstitial atoms constituting point-like defects. Energy dependence of the yields of dechanneling is also shown to provide quantitative information on the structure of extended and distortion-type defects such as stacking faults, twins, Guinier-Preston zones and dislocations.

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