Grain Boundary Structure Analysis by HRTEM

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  • 電子線で今何ができるか１．電子線結晶構造解析の最先端　　高分解能電子顕微鏡法による界面構造解析
  • コウ ブンカイノウ デンシ ケンビキョウホウ ニ ヨル カイメン コウゾウ カイセキ

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Several contributions of TEM on the interface science are reviewed in chronographic order. The first contribution of TEM is the observation of grain boundary dislocation. The observation of gold (113) Σ11 boundary followed, giving experimental proof of the CSL model. In silicon boundary the least dangling bond rule govern the atomic structure. In the diamond grain boundary a dangling bond may not elevate the boundary contradictory to the least dangling bond rule. Super high-resolution of the HVHRTEM enable us to determine atomic species in the grain boundary; three-fold coordinated atomic site in SiC boundary was occupied by carbon and an alike pair in the SiC boundary was shown to be a Si-Si pair. Combined use of atomic resolution HRTEM and EELSE allows us to discuss even the correlation between atomic structure and nature of the corresponding interface.

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