書誌事項
- タイトル別名
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- Observation of Epitaxial Diamond Layer by Using X-ray Topography
- エピタキシャルダイヤモンド ハクマク ノ トポグラフィ ニ ヨル カンサツ
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抄録
Semiconductor epitaxial CVD single crystal diamond is considered a potential material for power devices because of its unique characteristics. In the discussion on the relationship between crystal quality and device performance, the atomic purity and defect concentration have been considered. In this paper, the dislocation analysis is shown for the suggestion of the established standard dislocation analysis method. The aggregation of edge dislocation and mixed dislocation are observed by the analysis by using X-ray topography.
収録刊行物
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- 日本結晶学会誌
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日本結晶学会誌 54 (1), 54-58, 2012
日本結晶学会
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詳細情報 詳細情報について
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- CRID
- 1390282679066981760
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- NII論文ID
- 10030264968
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- NII書誌ID
- AN00188364
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- BIBCODE
- 2012NKG....54...54K
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- COI
- 1:CAS:528:DC%2BC38XmtlWqsb0%3D
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- ISSN
- 18845576
- 03694585
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- NDL書誌ID
- 023566578
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可