Impedonce-frequency Characteristics of Photoconducfive Loyers

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  • 光導電性被膜のインピーダンスの周波数特性
  • ヒカリ ドウデンセイ ヒマク ノ インピーダンス ノ シュウハスウ トクセイ

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Abstract

Measurements of the small signal impedance of photoconductive layers have been made both in the light and in the dark over the frequency rang 0.001 Hz to 10 kHz.<BR>The impedance in the rang 0.1 Hz to 10 kHz was measured with a a.c. bridge and for the frequencies lower than 0.1 Hz the measurements were achieved with the aid of Rissajious' figure method given by A.J. Baker and A.R.Piercy.<BR>The results were obtained as an equivalent parallel resistance Rp and a capacitance Cp of the photoconductive layer. Impedance loci were plotted using equivalent series resistance Rsand reactance Xs converted from above parallel components.<BR>The theory resulted in an equivalent circuit for a photoconductive layer and then each value of curcuit elements was determined empirically utilizing the parallel components or impedance loci descrived above.<BR>Theoretical considerations were given on the basis of the equivalent circuits for the internal states of photoconductive films.

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