Performance Improvement of Benzothienobenzothiophene-Based Organic Field-Effect Transistors Processed from Halogen-Free Solvents

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  • NAKAMICHI Ryosuke
    Department of Physics and Electronics, Osaka Prefecture University
  • KIMURA Yu
    Department of Physics and Electronics, Osaka Prefecture University
  • NAGASE Takashi
    Department of Physics and Electronics, Osaka Prefecture University The Research Institute for Molecular Electronic Devices, Osaka Prefecture University
  • KOBAYASHI Takashi
    Department of Physics and Electronics, Osaka Prefecture University The Research Institute for Molecular Electronic Devices, Osaka Prefecture University
  • TAKIMIYA Kazuo
    Department of Applied Chemistry, Hiroshima University The Center for Emergent Matter Science, RIKEN
  • HAMADA Masahiro
    R & D Planning Division, Nippon Kayaku Co., Ltd.
  • NAITO Hiroyoshi
    Department of Physics and Electronics, Osaka Prefecture University The Research Institute for Molecular Electronic Devices, Osaka Prefecture University

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Other Title
  • 非ハロゲン系溶媒を用いたベンゾチエノベンゾチオフェン有機電界効果トランジスタの高性能化
  • ヒハロゲンケイ ヨウバイ オ モチイタ ベンゾチエノベンゾチオフェン ユウキ デンカイ コウカ トランジスタ ノ コウセイノウカ

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Abstract

The performance of top-gate organic field-effect transistors (OFETs) based on 2,7-dioctyl [1] benzothieno [3,2-b] [1] benzothiophene (C8-BTBT) using halogen-free organic solvents for forming semiconductor layers has been investigated to reduce the impacts on environment in the solution process. Top-gate FETs where C8-BTBT thin films processed by spin coating from non-halogen solvents onto cross-linked poly (4-vinylphenol) layers exhibit high field-effect mobility of 4cm2V-1s-1 and good subthreshold characteristics, which are comparable to those of devices processed from a halogen solvent of chlorobenzene.

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