Novel Temperature Dependence of Photoconductivity in New Semiconductor Bi<SUB>2</SUB>O<SUB>3</SUB>; M<SUP>2+</SUP>
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- Minami Hidetoshi
- Department of Pure and Applied Sciences, College of Arts and Sciences, University of Tokyo
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- Masumi Taizo
- Department of Pure and Applied Sciences, College of Arts and Sciences, University of Tokyo
Bibliographic Information
- Other Title
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- Novel Temperature Dependence of Photoconductivity in New Semiconductor Bi2O3;M2+
- Novel Temperature Dependence of Photoco
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Abstract
Single crystals of bismuth oxide with rhombohedral layered structure have been synthesized for the first time by means of stabilization with addition of the divalent metals Sr, Ca and Cu. Novel temperature dependence of transient photoconductivity clearly indicates anomalously sustained life time of photocarriers together with magneto-resistance mobility and suggests the relaxation process due to the exciton formation with large binding energy. Similar temperature dependences have been observed also in the host insulators of high-Tc superconductors.
Journal
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 60 (12), 4040-4043, 1991
THE PHYSICAL SOCIETY OF JAPAN
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Details 詳細情報について
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- CRID
- 1390282679154671232
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- NII Article ID
- 110001977120
- 210000096450
- 130003901001
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- NII Book ID
- AA00704814
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- BIBCODE
- 1991JPSJ...60.4040M
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- COI
- 1:CAS:528:DyaK38Xntlyitw%3D%3D
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- ISSN
- 13474073
- 00319015
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- NDL BIB ID
- 3740264
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed