Novel Temperature Dependence of Photoconductivity in New Semiconductor Bi2O3;M2+
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- Minami Hidetoshi
- Department of Pure and Applied Sciences, College of Arts and Sciences, University of Tokyo
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- Masumi Taizo
- Department of Pure and Applied Sciences, College of Arts and Sciences, University of Tokyo
書誌事項
- タイトル別名
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- Novel Temperature Dependence of Photoconductivity in New Semiconductor Bi<SUB>2</SUB>O<SUB>3</SUB>; M<SUP>2+</SUP>
- Novel Temperature Dependence of Photoco
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Single crystals of bismuth oxide with rhombohedral layered structure have been synthesized for the first time by means of stabilization with addition of the divalent metals Sr, Ca and Cu. Novel temperature dependence of transient photoconductivity clearly indicates anomalously sustained life time of photocarriers together with magneto-resistance mobility and suggests the relaxation process due to the exciton formation with large binding energy. Similar temperature dependences have been observed also in the host insulators of high-Tc superconductors.
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 60 (12), 4040-4043, 1991
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390282679154671232
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- NII論文ID
- 110001977120
- 210000096450
- 130003901001
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1991JPSJ...60.4040M
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- COI
- 1:CAS:528:DyaK38Xntlyitw%3D%3D
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 3740264
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可