De Haas-van Alphen Effect and Fermi Surfaces in UC.

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  • Yamamoto Etsuji
    Japan Atomic Energy Research Institute, Tokai, Ibaraki 319–1195
  • Haga Yoshinori
    Japan Atomic Energy Research Institute, Tokai, Ibaraki 319–1195
  • Inada Yoshihiko
    Graduate School of Science, Osaka University, Toyonaka, Osaka 560–0043
  • Murakawa Masao
    Graduate School of Science, Osaka University, Toyonaka, Osaka 560–0043
  • Onuki Yoshichika
    Japan Atomic Energy Research Institute, Tokai, Ibaraki 319–1195 Graduate School of Science, Osaka University, Toyonaka, Osaka 560–0043
  • Maehira Takahiro
    Graduate School of Science and Technology, Niigata University, Niigata 950–2181
  • Hasegawa Akira
    Faculity of Science, Niigata University, Niigata 950–2181

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Abstract

We grew a high-quality single crystal of UC and carried out the de Haas-van Alphen(dHvA) experiments. The Fermi surfaces of a semimetal UC were confirmed to consist of three ellipsoidal hole-Fermi surfaces centered at the X points and six cushion-like electron-Fermi surfaces centered at the W points in the fcc Brillouin zone. These Fermi surface properties are based on the combined results of dHvA experiments and SRAPW-energy band calculations. The hole and electron Fermi surfaces mainly originate from the C 2p valence band and the U 5f conduction band, respectively. The cyclotron mass of the hole is light, being a rest mass of an electron m0, while the mass of the electron is heavy, being in the range from 4.0 to 15 m0. The mass enhancement is large for the electron Fermi surface, originated from the U 5f character.

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