<i><i>I</i><i>n</i></i><i><i>s</i><i>i</i><i>t</i><i>u</i></i>Scanning Tunneling Microscopy Observation of the Unreconstructed Region in a Quenched Si(111) Surface: Dynamic Size-Conversion of the Stacking-Faulted Half of the DAS Structure
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- Tochihara Hiroshi
- Department of Applied Physics, Kyushu University, Ropponmatsu, Chuo–ku, Fukuoka 810–8560
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- Shimada Wataru
- National Institute of Polar Research, Kaga, Itabashi–ku, Tokyo 173–0003
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- Yamamoto Hiroshi
- Research Center for Advanced Science and Technology, University of Tokyo, 4–6–1 Komaba, Meguro–ku, Tokyo 153–0041
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- Taniguchi Masahiro
- Faculty of Science, Hokkaido University, Sapporo 060–0811
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- Yamagishi Akihiko
- Faculty of Science, Hokkaido University, Sapporo 060–0811
書誌事項
- タイトル別名
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- In situ Scanning Tunneling Microscopy Observation of the Unreconstructed Region in a Quenched Si(111) Surface: Dynamic Size-Conversion of the Stacking-Faulted Half of the DAS Structure.
- In situ Scanning Tunneling Microscopy O
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説明
The DAS 7× 7 surface structure is known to be the most stable on Si(111), and we investigated its formation mechanism by scanning tunneling microscopy. Triangular narrow unreconstructed-regions (“1× 1”), prepared on terraces by quenching, are chosen for in situ observation of the formation of the unit cell of the DAS 7× 7 at about 250°C. It is demonstrated that the single stacking-faulted half of the unit cell is formed or annihilated dynamically in a structural sequence of “1× 1”↔ 5× 5↔ 7× 7↔ 9× 9. The faulted half is stabilized when another neighboring faulted-half of the same size is formed during its lifetime. We propose a formation model for the 7× 7 unit cell.
収録刊行物
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 67 (5), 1513-1516, 1998
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390282679157061888
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- NII論文ID
- 110001978468
- 210000100807
- 130004536584
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1998JPSJ...67.1513T
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- ISSN
- 13474073
- 00319015
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- 本文言語コード
- en
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