Electrical Resistivity of Doped Mott Insulators<b><i>V</i><sub>2-<i>y</i></sub><i>O</i><sub>3</sub></b>
-
- Nishimoto Satoshi
- Department of Physics, Faculty of Science and Technology, Science University of Tokyo, Noda 278
-
- Moriya Toru
- Department of Physics, Faculty of Science and Technology, Science University of Tokyo, Noda 278
書誌事項
- タイトル別名
-
- Electrical Resistivity of Doped Mott Insulators V2-yO3.
- Electrical Resistivity of Doped Mott In
この論文をさがす
説明
The electrical resistivity of metallic V2-yO3 is calculated assuming that the antiferromagnetic spin fluctuations dominate the scattering mechanism for the conduction electrons. The spin fluctuations are described in terms of the self-consistent renormalization theory with parameter values estimated from the results of a neutron inelastic scattering experiment. The final result agrees reasonably well with the experimental results.
収録刊行物
-
- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
-
Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 65 (4), 905-907, 1996
一般社団法人 日本物理学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390282679157747072
-
- NII論文ID
- 110001970160
- 210000100006
-
- NII書誌ID
- AA00704814
-
- BIBCODE
- 1996JPSJ...65..905N
-
- ISSN
- 13474073
- 00319015
-
- NDL書誌ID
- 3956500
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDLサーチ
- Crossref
- CiNii Articles
- OpenAIRE
-
- 抄録ライセンスフラグ
- 使用不可