Carrier Accumulation in Momentum Space and Related Phenomena under Intense Microwave Fields in Semiconductors(2)Quasi-One-Dimensional Systems

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  • Kurosawa Tatsumi
    Department of Physics, Faculty of Science and Engineering, Chuo University, Kasuga 1–13–27, Bunkyo–ku, Tokyo 112–8551
  • Ishida Norihisa
    Department of Physics, Faculty of Science and Engineering, Chuo University, Kasuga 1–13–27, Bunkyo–ku, Tokyo 112–8551

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  • Carrier Accumulation in Momentum Space and Related Phenomena under Intense Microwave Fields in Semiconductors. II. Quasi-One-Dimensional Systems.
  • Carrier Accumulation in Momentum Space

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説明

When the dominant scattering mechanism is optical phonon emission, the application of appropriately intense microwave fields isexpected to cause an accumulated distribution of carriers inmomentum space and related peculiar phenomena, as described in aprevious paper which treated usual bulk semiconductors. It is shownhere that the carrier accumulation effect is more pronounced inone-dimensional systems in the direction of the microwave fields, because of the absence of transverse degrees of freedom. Computationsare made for electrons in GaAs crystals confined bystrong magnetic fields of 12-- 24 T. The results show that peculiardc field responses including absolute negative resistance areexpected under realistic experimental conditions, e.g. in sampleswith more than 1014 cm-3 charged impurity concentration.

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