Temperature Dependence of the Inelastic Scattering Time in Metallic n-GaAs

書誌事項

タイトル別名
  • Temperature Dependence of the Inelastic Scattering Time in Metallic <I>n</I>-GaAs
  • Temperature Dependence of the Inelastic

この論文をさがす

抄録

Temperature dependence of the inelastic scattering time τε in metallic n-GaAs (n=NDNA=7.83×1016 cm−3) is determined experimentally in the wide temperature range of 50 mK–8 K by two methods: One is from the H2 [H: magnetic field] dependence of the magnetoconductivity Δσ in weak fields, where Δσ=σ(H, T)−σ(0, T) is proportional to τε3⁄2H2 [T: temperature]. The other is from the temperature dependence of Δσ in strong fields, which is given by Δσ=(e2⁄2π2h)[0.605(eHch)1⁄2−(Dτε)−1⁄2], where D is the diffusion constant. We find that the two methods give the T−1 temperature dependence of τε. This result is in agreement with the recent theory of τεT−1 in 3-dimensional system calculated by Isawa.

収録刊行物

被引用文献 (1)*注記

もっと見る

参考文献 (5)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ