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- Yamashita Jiro
- Department of Physics, College of Humanities and Sciences, Nihon University
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- Asano Setsuro
- Department of Physics, College of General Education, University of Tokyo
書誌事項
- タイトル別名
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- Electrical Resistivity of Transition Me
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The electron-phonon mass enhancement factor λ and the electrical resistivity of Mo are calculated both by the APW rigid muffin-tin approximation (RMTA) and the tightbinding approximation. The detailed analysis of the results shows that RMTA disregards both the positive contribution from the outside of the inscribed sphere and the negative contribution due to the electron response to the perturbation. The value of λ or the resistivity at high temperatures given by RMTA seems to be fairly close to the true value owing to the fortunate cancellation of the errors.
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 50 (8), 2598-2605, 1981
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390282679161908608
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- NII論文ID
- 110001975873
- 130003738548
- 210000089552
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1981JPSJ...50.2598Y
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- COI
- 1:CAS:528:DyaL3MXlt1Clt7o%3D
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 2322286
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可