Lattice Gas Model Analysis of the (111) Surface Structures of Si, Ge and Related Systems. II. On the DAS Model

DOI Web Site BIBCODE 被引用文献4件 参考文献16件

この論文をさがす

説明

The interrelation among the (7×7), (5×5) and c(2×8) reconstructions of the (111) surface of Si, Ge and related systems is discussed by extending previous analysis of the lattice gas model on a triangular net to a multi-layer model to the purpose of analyzing the DAS structure of the (7×7) restruction of Si (111) surface proposed by Takayanagi et al. It is concluded that the stacking fault characterizing the DAS structure has a good reason to appear and that it can solve the difficulties encountered in the previous analysis concerning the stability of the (7×7) state and also that of the c(2×8) state of Ge(111) whose DAS like atomic configuration is newly proposed. The atomic configuration of the (1×1) disordered state at high temperatures is discussed also. The possibility of the floating phase discussed previously is reexamined thereby.

収録刊行物

被引用文献 (4)*注記

もっと見る

参考文献 (16)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ