Hall Effect in Heusler Alloys Fe<sub>2+<i>x</i></sub>V<sub>1-<i>x</i></sub>Al and Fe<sub>2+<i>x</i></sub>V<sub>1-<i>x</i></sub>Ga
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- Fukuhara Tadashi
- Department of Liberal Arts and Sciences, Toyama Prefectural University
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- Matsuda Hiroko
- Department of Physics, Tokyo Medical University
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- Masubuchi Shinichi
- Department of Physics, Tokyo Medical University
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- Ooiwa Kiyoshi
- Department of Physics, Tokyo Medical University
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- Takano Yoshihiko
- National Institute for Materials Science
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- Shimizu Fumihiko
- Department of Applied Physics, National Defense Academy
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- Endo Keizo
- Kanagawa Institute of Technology
書誌事項
- タイトル別名
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- Hall Effect in Heusler Alloys Fe2+xV1-xAl and Fe2+xV1-xGa
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We have investigated the field dependence of the Hall resistivity for Fe2+xV1−xAl (x=0, 0.1, 0.2) and Fe2+xV1−xGa (x=−0.1, 0.0, 0.1). The carrier concentration of nonmetallic Fe2VAl is expected to be of the order of 1% of ordinary metals. The extraordinary Hall effect in the ferromagnetically ordered state is mainly characterized by the side-jump effect occurring in ferromagnetic clusters that have a metallic nature.
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 73 (1), 13-16, 2004
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390282679163393792
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- NII論文ID
- 210000104817
- 110001954684
- 130004538528
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- NII書誌ID
- AA00704814
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- BIBCODE
- 2004JPSJ...73...13F
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 6817263
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可
