Planar Defect Modes Excited at the Band Edge of Three-dimensional Photonic Crystals

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  • Iida Masaru
    Kansai Advanced Research Center, National Institute of Information and Communications Technology
  • Tani Masahiko
    Kansai Advanced Research Center, National Institute of Information and Communications Technology
  • Sakai Kiyomi
    Kansai Advanced Research Center, National Institute of Information and Communications Technology
  • Watanabe Masayoshi
    Kansai Advanced Research Center, National Institute of Information and Communications Technology
  • Kitahara Hideaki
    Department of Physics, Faculty of Science, Shinshu University
  • Tohme Takuya
    Department of Physics, Faculty of Science, Shinshu University
  • Wada Takeda Mitsuo
    Department of Physics, Faculty of Science, Shinshu University

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We experimentally and numerically studied planar defect modes excited at band-edge resonant mode frequencies in three-dimensional photonic crystals. We identified the observed peaks as the defect modes using the spectrum calculated at the defect layer. The spectrum also clarifies the difference between these modes and ordinary band-edge resonant modes. The calculated spatial distribution of the electric field in the defect modes shows that the defect modes have a characteristic field concentration in the band-edge resonant mode.

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