Gap Formation in the Filled Skutterudite CeOs4Sb12
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- Matsunami Masaharu
- Graduate School of Science and Technology, Kobe University
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- Okamura Hidekazu
- Graduate School of Science and Technology, Kobe University
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- Nanba Takao
- Graduate School of Science and Technology, Kobe University
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- Sugawara Hitoshi
- Department of Physics, Tokyo Metropolitan University
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- Sato Hideyuki
- Department of Physics, Tokyo Metropolitan University
Bibliographic Information
- Other Title
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- Gap Formation in the Filled Skutterudite CeOs<sub>4</sub>Sb<sub>12</sub>
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Abstract
We have studied the optical conductivity of the filled skutterudite CeOs4Sb12. The optical conductivity spectra show a strong temperature dependence and reveal an energy gap of ∼30 meV below 60 K. This shows that the density of states near the Fermi level of CeOs4Sb12 is strongly reduced. In addition to the gap formation, a pronounced peak is observed at ∼70 meV below 160 K. This mid-infrared peak is interpreted in terms of optical excitations across a hybridization gap consisting of conduction- and f-electron states. The observed characteristics in the optical spectra are quite similar to those previously reported for Kondo semiconductors. We compare the optical characteristics of CeOs4Sb12 found in the present work with other physical properties, and analyze its electronic structures.
Journal
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 72 (11), 2722-2725, 2003
THE PHYSICAL SOCIETY OF JAPAN
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Details 詳細情報について
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- CRID
- 1390282679164645504
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- NII Article ID
- 210000104524
- 110001954295
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- NII Book ID
- AA00704814
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- BIBCODE
- 2003JPSJ...72.2722M
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- ISSN
- 13474073
- 00319015
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- NDL BIB ID
- 6744954
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed