Gap Formation in the Filled Skutterudite CeOs<sub>4</sub>Sb<sub>12</sub>
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- Matsunami Masaharu
- Graduate School of Science and Technology, Kobe University
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- Okamura Hidekazu
- Graduate School of Science and Technology, Kobe University
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- Nanba Takao
- Graduate School of Science and Technology, Kobe University
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- Sugawara Hitoshi
- Department of Physics, Tokyo Metropolitan University
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- Sato Hideyuki
- Department of Physics, Tokyo Metropolitan University
書誌事項
- タイトル別名
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- Gap Formation in the Filled Skutterudite CeOs4Sb12
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説明
We have studied the optical conductivity of the filled skutterudite CeOs4Sb12. The optical conductivity spectra show a strong temperature dependence and reveal an energy gap of ∼30 meV below 60 K. This shows that the density of states near the Fermi level of CeOs4Sb12 is strongly reduced. In addition to the gap formation, a pronounced peak is observed at ∼70 meV below 160 K. This mid-infrared peak is interpreted in terms of optical excitations across a hybridization gap consisting of conduction- and f-electron states. The observed characteristics in the optical spectra are quite similar to those previously reported for Kondo semiconductors. We compare the optical characteristics of CeOs4Sb12 found in the present work with other physical properties, and analyze its electronic structures.
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 72 (11), 2722-2725, 2003
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390282679164645504
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- NII論文ID
- 210000104524
- 110001954295
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- NII書誌ID
- AA00704814
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- BIBCODE
- 2003JPSJ...72.2722M
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 6744954
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可
