Electrical Resistivity of Liquid Te,Ga2Te3,In2Te3 and Tl2Te under High Pressure
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- Tamura Kozaburo
- Department of Physics, Faculty of Science, Kyoto University
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- Misonou Masao
- Department of Physics, Faculty of Science, Kyoto University
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- Endo Hirohisa
- Department of Physics, Faculty of Science, Kyoto University
書誌事項
- タイトル別名
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- Electrical Resistivity of Liquid Te, Ga<SUB>2</SUB>Te<SUB>3</SUB>, In<SUB>2</SUB>Te<SUB>3</SUB> and Tl<SUB>2</SUB>Te under High Pressure
- Electrical Resistivity of Liquid Te Ga2
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抄録
Electrical resistivity ρ of liquid semiconductors Te, Ga2Te3, In2Te3 and Tl2Te has been measured up to 30 kbar and 900°C. The resistivity ρ of liquid Ga2Te3 and In2Te3 rapidly decreases with pressure in the low pressure region (\lesssim5 kbar), while ρ of liquid Tl2Te gradually decreases in the wide pressure range. This difference is discussed in connection with the bonding character of constituent atoms.
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 46 (2), 637-642, 1979
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390282679165744128
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- NII論文ID
- 110001964292
- 130003737698
- 210000087972
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1979JPSJ...46..637T
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- COI
- 1:CAS:528:DyaE1MXhs1SltrY%3D
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 2040823
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可