Net Charge of Electron-Hole Drops in Pure and Doped Ge
-
- Ugumori Tadaki
- Technical College, Yamaguchi University
-
- Morigaki Kazuo
- The Institute for Solid State Physics, University of Tokyo
-
- Nagashima Chieko
- The Institute for Solid State Physics, University of Tokyo
Bibliographic Information
- Other Title
-
- Net Charge of Electron Hole Drops in Pu
Search this article
Description
A net charge of drops has been measured with a photocurrent method and a photoluminescence method at 1.5 K in pure and doped Ge. The sign of the net charge obtained from the two methods is in agreement with each other. The sign is negative in pure Ge (ND<1013 cm−3) and p-type Ge (NA=8×1014 cm−3). The sign is positive in n-type Ge (1013 cm−3\lesssimND≤2×1014 cm−3), and the sign cannot be obtained for ND≥8×1014 cm−3 and NA=5×1011 cm−3. The sign reversals are not observed under ⟨111⟩ uniaxial stress (\lesssim103 kg/cm2).
Journal
-
- Journal of the Physical Society of Japan
-
Journal of the Physical Society of Japan 46 (2), 536-541, 1979
THE PHYSICAL SOCIETY OF JAPAN
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390282679165763968
-
- NII Article ID
- 110001964275
- 130003737692
- 210000087952
-
- NII Book ID
- AA00704814
-
- BIBCODE
- 1979JPSJ...46..536U
-
- COI
- 1:CAS:528:DyaE1MXhsVClu7w%3D
-
- ISSN
- 13474073
- 00319015
-
- NDL BIB ID
- 2040824
-
- Text Lang
- en
-
- Data Source
-
- JaLC
- NDL Search
- Crossref
- CiNii Articles
- OpenAIRE
-
- Abstract License Flag
- Disallowed