Annealing Effects of Paramagnetic Defects Introduced near Silicon Surface

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  • Wada Takao
    Department of Electronics, Faculty of Engineering, Nagoya University
  • Mizutani Teruyoshi
    Department of Electronics, Faculty of Engineering, Nagoya University
  • Hirose Masataka
    Department of Electronics, Faculty of Engineering, Nagoya University
  • Arizumi Tetsuya
    Department of Electronics, Faculty of Engineering, Nagoya University

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The annealing of the paramagnetic defects, which are created near the surface of silicon when it is crushed into powder, was investigated by measuring the paramagnetic resonance signal strength. The centers are annealed in two stages; one is at lower temperatures below 400°C. Through this stage the paramagnetic center is annealed with the activation energy 1.4 eV, in agreement with that for annealing of Si-A centers in an irradiated Si (pulled). The Si-A centers are formed by the capture of an oxygen atom (or ion) adsorbed on the surface in a vacancy introduced by mechanical damage in the same way as the case of the irradiated Si. This type of center is destroyed by diffusion of an oxygen atom into Si and forming an O2-vacancy during the heat treatment below 400°C. The annealing behaviour of the paramagnetic centers at higher temperatures is found to resemble that in the irradiated Si due to the formation of an O3-vacancy complex, which is formed by the successive diffusion of an oxygen atom adsorbed on the surface.

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