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Electrical Resistivity and Defect Energy Levels in Reduced Titanium Dioxide at Low Temperatures
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- Hasiguti Ryukiti R.
- Department of Metallurgy, University of Tokyo
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- Minami Kazuko
- National Research Institute for Metals
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- Yonemitsu Hir\={o}
- Low Temperature Laboratory, Toshiba Electric Company
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Description
The resistivity of reduced rutile was measured from 80°K down to about 2°K. Activation energies derived from the slopes of resistivity curve are 0.01∼0.02 eV above about 20°K and 0.0005∼0.005 eV below about 20°K. It is proposed that the electronic conduction in this substance below about 20°K is due to the “defect level conduction”. Conduction mechanisms at higher temperatures are also discussed.
Journal
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 16 (11), 2223-2226, 1961
THE PHYSICAL SOCIETY OF JAPAN
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Keywords
Details 詳細情報について
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- CRID
- 1390282679166815616
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- NII Article ID
- 110001972978
- 210000076918
- 130003890168
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- NII Book ID
- AA00704814
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- BIBCODE
- 1961JPSJ...16.2223H
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- ISSN
- 13474073
- 00319015
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- NDL BIB ID
- 9235861
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
- OpenAIRE
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- Abstract License Flag
- Disallowed