The Trapping of Photo-Carriers in Anthracene Crystals by Tetracene

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  • Oyama Keiko
    The Institute for Solid State Physics, the University of Tokyo
  • Nakada Ichiroh
    The Institute for Solid State Physics, the University of Tokyo

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The trapping of free electrons and holes in anthracene single crystals doped with tetracene has been measured by the pulsed photoconduction method. Tetracene behaves as a shallow hole trap located 0.40 eV ±0.02 eV above the hole band. At the same time it also acts both as a shallow and a deep electron traps. The shallow electron trap is located at 0.17±0.02 eV below the electron band. Both for electrons and holes the capture cross-section of shallow traps is proportional to the tetracene content.<BR>The quantum efficiency for photo-carrier generation in anthracene does not change by the existence of tetracene which is a remarkable quencher for photo-fluorescence. From this result it is deduced that the photo-carriers are generated by multi-exciton processes, and that the generation of carriers at the surface interacting with diffusing-out singlet excitons makes negligible contribution for photoconduction.

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