Galvanomagetic Properties in n-InAs at 77 K

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説明

Galvanomagnetic properties in n-InAs are studied at 77 K by means of the Hall measurement technique. The electron mobility at the low electric field is controlled by ionized impurity scattering and quantum effects. In the intermediate electric field, the electron mobility shows an E−1⁄2 dependence and it is determined by acoustic phonon scattering. Experimental results of the electron drift velocity are in good agreement with the numerical analysis given by Curby and Ferry in the electric field where the carrier density is almost constant (E\lesssim1000 V/cm). At the high electric field and transverse high magnetic field in the avalanche breakdown region, the drift velocity is observed to saturate which might be due to optical phonon scattering. In this region the saturation velocity υs decreases with increasing the transverse magnetic field B and the experimental relation υsB1⁄3 is obtained.

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