Relaxation process in electron spin resonance of Ti-doped VO2

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  • Relaxation Process in Electron Spin Resonance of Ti-Doped VO<SUB>2</SUB>

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In order to investigate the spin relaxation mechanism in Ti-doped VO2 in relation to the itineracy of electrons associated with Ti impurities substituted for V4+, the linewidth and line intensity of ESR absorption at 24 GHz have been measured on samples doped with various concentrations of Ti in a temperature range between 4.2 and 250 K. The spectrum with hfs lines is observed at low concentration of Ti, while a single narrowed line of absorption is found at higher concentration. The temperature dependence of linewidth and line intensity of this single absorption line are discussed with respect to the staying time of electrons in the impurity state and their motions between impurity centers. The hopping frequency of electrons and the staying time in the impurity state are determined.

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