X-ray Irradiation-Induced Carrier Doping Effects in Organic Dimer–Mott Insulators

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We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer–Mott insulators κ-(ET)2X with X = Cu[N(CN)2]Cl and Cu2(CN)3. For κ-(ET)2Cu[N(CN)2]Cl, we have observed a large decrease of the resistivity by 40% with the irradiation at 300 K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the half-filled dimer–Mott insulators.

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