Observation of Half-Integer Quantum Hall Effect in Single-Layer Graphene Using Pulse Magnet

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  • Masubuchi Satoru
    Institute of Industrial Science, University of Tokyo
  • Suga Ken-ichi
    Institute for Solid State Physics, University of Tokyo
  • Ono Masashi
    Institute of Industrial Science, University of Tokyo
  • Kindo Koichi
    Institute for Solid State Physics, University of Tokyo
  • Takeyama Shojiro
    Institute for Solid State Physics, University of Tokyo
  • Machida Tomoki
    Institute of Industrial Science, University of Tokyo Institute for Nano Quantum Information Electronics, University of Tokyo

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Abstract

We report on the magnetotransport measurement on a single-layer graphene in pulsed magnetic fields up to B=53 T. With either electron- or hole-type charge carriers, the Hall resistance RH is quantized into RH=(h⁄e2)ν−1 with ν=±2, ±6, and ±10, which demonstrates the observation of a half-integer quantum Hall effect (QHE). At B=50 T, the half-integer QHE is even observed at room temperature in spite of a conventional carrier mobility μ=4000 cm2 V−1 s−1.

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