Giant Tunneling Magnetoresistance in MgO-Based Magnetic Tunnel Junctions
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- Yuasa Shinji
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
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A magnetic tunnel junction (MTJ), which consists of a thin insulating layer (a tunnel barrier) sandwiched between two ferromagnetic electrode layers, exhibits tunneling magnetoresistance (TMR) due to spin-dependent electron tunneling. Since the discovery of room-temperature (RT) TMR effect in 1995, MTJs with an amorphous aluminum oxide (Al–O) tunnel barrier have been studied extensively. The Al–O-based MTJs exhibit magnetoresistance (MR) ratios up to about 70% at RT and are currently used in the read heads of hard disk drives and magnetoresistive random access memory (MRAM). MTJs with MR ratios significantly higher than 70% at RT, however, are needed for next-generation spintronic devices. In 2001, first-principle theories predicted that the MR ratios of epitaxial Fe/MgO/Fe MTJs with a crystalline MgO(001) barrier would be over 1000% because of the coherent tunneling of fully spin-polarized Δ1 electrons. In 2004, MR ratios of about 200% were obtained at RT in MTJs with a single-crystal MgO(001) barrier or a textured MgO(001) barrier. CoFeB/MgO/CoFeB MTJs for practical applications were also developed and found to have MR ratios up to 500% at RT. MgO-based MTJs are of great importance not only for device applications but also for clarifying the physics of spin-dependent tunneling.
収録刊行物
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 77 (3), 031001-031001, 2008
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390282679175014016
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- NII論文ID
- 130005436283
- 210000107122
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- NII書誌ID
- AA00704814
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 9421256
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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