Spin-Torque Diode Effect and Its Application
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- Suzuki Yoshishige
- Graduate School of Engineering Science, Osaka University Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
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- Kubota Hitoshi
- Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
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Description
A spin-polarized rf current injected into a magnetic cell exerts a torque to the local spin momenta and may excite ferromagnetic resonance (FMR) modes in the magnetic cell. FMR mode excitation in a magnetic tunnel junction is accompanied by the oscillation of its resistance and results a rectification effect. This “spin-torque diode effect” provides a quantitative measure of the spin-torque. By using this effect, the origin of the spin-torque and the critical voltage of spin-transfer magnetization switching were investigated. It is predicted that if the critical voltage becomes smaller than 25 mV, the spin-torque diode may have higher rectification output than p–n junction semiconductor diodes at room temperature. Also, the interplay between the giant tunneling magnetoresistance effect and the spin-torque will result in a negative differential resistance effect, and the magnetic tunneling junction may possess an amplification function.
Journal
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 77 (3), 031002-031002, 2008
THE PHYSICAL SOCIETY OF JAPAN
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Details 詳細情報について
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- CRID
- 1390282679175030272
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- NII Article ID
- 130005436300
- 110006633447
- 210000107123
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- NII Book ID
- AA00704814
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- ISSN
- 13474073
- 00319015
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- NDL BIB ID
- 9421258
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed