書誌事項
- タイトル別名
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- Synthesis of boron-doped diamonds by a static high-pressure process
- セイテキ コウアツ ゴウセイホウ ニ ヨル Bドープダイヤモンド ケッショウ ノ ゴウセイ
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High-quality boron-doped diamonds were synthesized from four boron-doped carbon sources with different boron concentration using a static high-pressure process with metal solvent. Three diamond pellets obtained from the carbon sources with boron concentrations less than the solubility limit showed a homogeneous appearance and obvious X-ray diffraction patterns characteristic of diamond. The electrically-conducting diamond with 0.2 mass% of boron showed the boron-bound exciton peak characteristic of boron doping in the cathode luminescence spectra, indicating its ability as a semiconductor.
収録刊行物
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- 炭素
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炭素 2013 (257), 95-102, 2013
炭素材料学会
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詳細情報 詳細情報について
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- CRID
- 1390282679207659904
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- NII論文ID
- 10031163325
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- NII書誌ID
- AN00140335
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- ISSN
- 18845495
- 03715345
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- NDL書誌ID
- 024689814
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可